Edge-emitting quantum well laser with integrated intracavity electrostatic gate

被引：0

作者：

Lee, RK ^{[1
]}

Xu, YJ ^{[1
]}

O'Brien, J ^{[1
]}

Painter, OJ ^{[1
]}

Scherer, A ^{[1
]}

Yariv, A ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

OPTOELECTRONIC INTEGRATED CIRCUITS II | 1997年 / 3290卷

关键词：

semiconductor laser; Schottky barrier diode; electrostatic current confinement; MESFET;

D O I：

10.1117/12.298238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ridge waveguide, edge-emitting single quantum well GaAs lasers with an integrated gating electrode have been fabricated. These devices integrate a MESFET structure with the laser PN junction so that the SBD (Schottky barrier diode) depletion layer can be used for transverse current confinement in the laser. Device fabrication was very simple requiring only an anisotropic etch for waveguide definition followed by a single self-aligned contact deposition step. The Schottky barrier depletion layers on either side of the ridge waveguide act to confine free carriers. This structure allows for separation of the optical and electrical confinement in the transverse direction without requiring complex fabrication. The device demonstrated modulation of the pulsed lasing threshold with gate control voltage on a 30 micron wide ridge. Above threshold, increasing power output with increasing gate voltage was demonstrated with negligible gate current. The multimode lasing spectrum showed that the increased power output occurred for all modes with no shift in the mode wavelengths to within the resolution of the measurement system.

引用

页码：172 / 180

页数：9