Effect of Kr/O2-Plasma Reactive Sputtering on Ferroelectric Nondoped HfO2 Formation for MFSFET With Pt Gate Electrode

被引：11
作者：
Ohmi, S. [1 ]
Kim, M. G. [1 ]
Kataoka, M. [1 ]
Hayashi, M. [1 ]
Mailig, R. M. D. [1 ]
机构：
[1] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 05期
关键词：
Hafnium oxide; krypton/oxygen-plasma; metal; ferroelectrics-Si field-effect transistor (MFSFET); nondope; platinum gate electrode; postmetallization annealing (PMA); reactive sputtering; FILMS; SEMICONDUCTOR; IMPACT; FET; XE;
D O I：
10.1109/TED.2021.3064907
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the effects of the Kr/O-2-plasma reactive sputtering on the nondoped HfO2 thin-film formation for ferroelectric gate metal-ferroelectrics-Si field-effect transistor (MFSFET). The remnant polarization was increased while the coercive voltage (V-c) was decreased for 5-nm-thick HfO2 formed by the Kr/O-2-plasma sputtering followed by the postmetallization annealing (PMA) utilizing the Pt gate electrode compared to the film formed by the Ar/O-2-plasma sputtering. The excellent fatigue properties until 10(10) cycles were realized under the +/- 4 V/5 mu s input pulses. The memory window (MW) of 1.2 V was obtained under 2.5 V operation in the drain current (I-D)- drain voltage (V-G) characteristics for the fabricated MFSFET.
引用
收藏
页码：2427 / 2433
页数：7
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[21]   Hf0.5Zr0.5O2-Based Ferroelectric Field-Effect Transistors With HfO2 Seed Layers for Radiation-Hard Nonvolatile Memory Applications [J].
Liu, Chen ;
Xiao, Wenwu ;
Peng, Yue ;
Zeng, Binjian ;
Zheng, Shuaizhi ;
Yin, Lu ;
Peng, Qiangxiang ;
Zhong, Xiangli ;
Liao, Min ;
Zhou, Yichun .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (09) :4368-4372
[22]   Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC [J].
Perez-Tomas, A. ;
Fontsere, A. ;
Jennings, M. R. ;
Gammon, P. M. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (05) :1336-1345
[23]   Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments [J].
Huang, Li-Tien ;
Chang, Ming-Lun ;
Huang, Jhih-Jie ;
Kuo, Chin-Lung ;
Lin, Hsin-Chih ;
Liao, Ming-Han ;
Lee, Min-Hung ;
Chen, Miin-Jang .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (05)
[24]   Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET [J].
Jha, Rajesh Kumar ;
Singh, Prashant ;
Goswami, Manish ;
Singh, B. R. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (23) :20360-20368
[25]   Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3 [J].
Xia, Yuqin ;
Liu, Lu ;
Tao, Xinge ;
Tian, Yuying ;
Xu, Jing-Ping .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (02) :782-788
[26]   Comparative passivation effect of ALD-driven HfO2 and Al2O3 buffer layers on the interface chemistry and electrical characteristics of Dy-based gate dielectrics [J].
Wang, Die ;
He, Gang ;
Hao, Lin ;
Gao, Juan ;
Zhang, Miao .
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (07) :1955-1965
[27]   The perovskite phase formation of 0.4Pb(Yb1/2Nb1/2)O3-0.6PbTiO3 thin films prepared on Pt/Ti electrode by reactive magnetron sputtering [J].
Im, KV ;
Choo, WK .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) :1553-1556
[28]   Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal-Ferroelectric-Metal-Insulator-Semiconductor Gate-Stacks Using Al-Doped HfO2 Thin Films [J].
Yoon, So-Jung ;
Min, Dae-Hong ;
Moon, Seung-Eon ;
Park, Kun Sik ;
Won, Jong Il ;
Yoon, Sung-Min .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (02) :499-504
123