Effect of Kr/O2-Plasma Reactive Sputtering on Ferroelectric Nondoped HfO2 Formation for MFSFET With Pt Gate Electrode

被引：11
作者：
Ohmi, S. [1 ]
Kim, M. G. [1 ]
Kataoka, M. [1 ]
Hayashi, M. [1 ]
Mailig, R. M. D. [1 ]
机构：
[1] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 05期
关键词：
Hafnium oxide; krypton/oxygen-plasma; metal; ferroelectrics-Si field-effect transistor (MFSFET); nondope; platinum gate electrode; postmetallization annealing (PMA); reactive sputtering; FILMS; SEMICONDUCTOR; IMPACT; FET; XE;
D O I：
10.1109/TED.2021.3064907
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the effects of the Kr/O-2-plasma reactive sputtering on the nondoped HfO2 thin-film formation for ferroelectric gate metal-ferroelectrics-Si field-effect transistor (MFSFET). The remnant polarization was increased while the coercive voltage (V-c) was decreased for 5-nm-thick HfO2 formed by the Kr/O-2-plasma sputtering followed by the postmetallization annealing (PMA) utilizing the Pt gate electrode compared to the film formed by the Ar/O-2-plasma sputtering. The excellent fatigue properties until 10(10) cycles were realized under the +/- 4 V/5 mu s input pulses. The memory window (MW) of 1.2 V was obtained under 2.5 V operation in the drain current (I-D)- drain voltage (V-G) characteristics for the fabricated MFSFET.
引用
收藏
页码：2427 / 2433
页数：7
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