Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

被引：59

作者：

Frazier, RM ^{[1
]}

Thaler, GT ^{[1
]}

Leifer, JY ^{[1
]}

Hite, JK ^{[1
]}

Gila, BP ^{[1
]}

Abernathy, CR ^{[1
]}

Pearton, SJ ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1857074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlCrN layers were grown by gas source molecular beam epitaxy with varying amounts of Cr (up to similar to3 at. %) under a broad range of Cr cell temperatures and V/III ratio. Magnetic measurements performed in a superconducting quantum interference device magnetometer showed evidence of ferromagnetism up to 350 K in single phase material. Magnetization dependence on dopant cell temperature and V/III was used to optimize the growth conditions of the AlCrN layers. The single-phase material was highly insulating (similar to10(10) Omega cm), while the material containing second phases (predominantly Cr2N and AlxCry) was conducting with resistivity of order 1000 Omega cm. High resolution x-ray diffraction. rocking curves indicated high crystalline quality in the single phase material. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 23 条

[11] Spin injection into semiconductors
Oestreich, M
Hübner, J
Hägele, D
Klar, PJ
Heimbrodt, W
Rühle, WW
Ashenford, DE
Lunn, B
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1251 - 1253
[12] Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited)
Ohno, H
Matsukura, F
Omiya, T
Akiba, N
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) : 4277 - 4282
[13] Spin-injection
Osofsky, M
[J]. JOURNAL OF SUPERCONDUCTIVITY, 2000, 13 (02): : 209 - 219
[14] POLYAKOV AY, IN PRESS J VAC SCI B
[15] SPIN-POLARIZED TRANSPORT
PRINZ, GA
[J]. PHYSICS TODAY, 1995, 48 (04) : 58 - 63
[16] Dilute magnetic semiconductors in spin-polarized electronics (invited)
Schmidt, G
Molenkamp, LW
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 7443 - 7447
[17] Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperature
Sonoda, S
Shimizu, S
Sasaki, T
Yamamoto, Y
Hori, H
[J]. JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 1358 - 1362
[18] Magnetic properties of n-GaMnN thin films
Thaler, GT
Overberg, ME
Gila, B
Frazier, R
Abernathy, CR
Pearton, SJ
Lee, JS
Lee, SY
Park, YD
Khim, ZG
Kim, J
Ren, F
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (21) : 3964 - 3966
[19] Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
Waldrip, KE
Han, J
Figiel, JJ
Zhou, H
Makarona, E
Nurmikko, AV
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (21) : 3205 - 3207
[20] Nitrogen-induced magnetic transition in small chromium clusters
Wang, Q
Sun, Q
Rao, BK
Jena, P
Kawazoe, Y
[J]. JOURNAL OF CHEMICAL PHYSICS, 2003, 119 (14) : 7124 - 7130

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