Pulsed plasma-enhanced chemical vapor deposition of Al2O3-TiO2 nanolaminates

被引:23
|
作者
Rowlette, Pieter C. [1 ]
Wolden, Colin A. [1 ]
机构
[1] Colorado Sch Mines, Dept Chem Engn, Golden, CO 80401 USA
基金
美国国家科学基金会;
关键词
Oxides; Alumina; Titania; Nanolaminate; Dielectric; SELF-LIMITING DEPOSITION; ATOMIC LAYER DEPOSITION; THIN-FILMS; ALUMINUM-OXIDE; LOW-TEMPERATURE; GROWTH; TIO2; ZNO;
D O I
10.1016/j.tsf.2009.10.136
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Self-limiting synthesis of alumina-titania nanolaminates (ATO, Al2O3/TiO2) was accomplished via pulsed plasma-enhanced chemical vapor deposition. At the synthesis temperature of 150 degrees C the alumina layers were amorphous. while TiO2 layers displayed a polycrystalline anatase structure. Digital control over nanolaminate structure was demonstrated through elemental analysis and transmission electron microscopy imaging. The dielectric performance of the ATO structures was examined as a function of composition and bilayer thickness. Capacitance-voltage measurements showed that the effective dielectric constant was consistent with treating the nanolaminates as individual capacitors in series. Current-voltage measurements showed that leakage current deteriorated with TiO2 content, though low leakage was restored through interfacial engineering. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3337 / 3341
页数:5
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