MoO3 trapping layers with CF4 plasma treatment in flash memory applications

被引：2

作者：

Kao, Chuyan Haur ^{[1
]}

Chen, Hsiang ^{[2
]}

Chen, Su-Zhien ^{[1
]}

Chen, Chian Yu ^{[2
]}

Lo, Kuang-Yu ^{[2
]}

Lin, Chun Han ^{[2
]}

机构：

[1] Chang Gung Univ, Kuei Shan, Taiwan

[2] Natl Chi Nan Univ, Puli, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2014年 / 320卷

关键词：

MoO3; memory; CF4; plasma; Fluorine atom; Crystallization; Interface; FILMS; XPS; OXIDE;

D O I：

10.1016/j.apsusc.2014.09.051

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this research, we used MoO3 with CF4 plasma treatment as charge trapping layer in metal-oxide-high-k-oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO3 charge trapping layer memory with suitable CF4 plasma treatment is promising for future nonvolatile memory applications. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：379 / 382

页数：4

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