Photoconduction mechanism of ultra-long indium oxide nanowires

被引：5

作者：

Mazouchi, M. ^{[1
]}

Sarkar, K. ^{[1
]}

Purahmad, M. ^{[1
]}

Farid, S. ^{[1
,3
]}

Dutta, M. ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA

[2] Univ Illinois, Dept Phys, Chicago, IL 60607 USA

[3] Univ Engn & Technol, Dept Elect Engn, Lahore, Pakistan

来源：

SOLID-STATE ELECTRONICS | 2018年 / 148卷

关键词：

Indium oxide nanowire; FET; Nanowire growth; Photoconduction mechanism; CONTACTS; SENSORS; ARRAYS;

D O I：

10.1016/j.sse.2018.07.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoelectrical mechanism of single Indium Oxide nanowires have been investigated using current-voltage characteristics measurements varying with temperature. The fabricated In2O3 nanowires show high photosensitivity up to 140 at room temperature. It is shown that the photosensitivity of In2O3 nanowires decreases by increasing the temperature due to shorter carrier life time, higher dark conductance and lower electron mobility at higher temperatures. The significantly enhanced photoconduction of single-In2O3 nanowires observed under UV illumination is attributed mainly to the transition from defect levels, which are introduced by the oxygen vacancies that are mostly present on the surface of the nanowires.

引用

页码：58 / 62

页数：5

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