Investigation of structural, optical and radiation shielding properties of boron-doped In2O3 thin films

被引：4

作者：

Kavgaci, Mustafa ^{[1
,2
]}

Kucukonder, Adnan ^{[1
]}

Kerli, Suleyman ^{[3
]}

机构：

[1] Kahramanmaras Sutcu Imam Univ, Dept Phys, Kahramanmaras, Turkey

[2] Kahramanmaras Istiklal Univ, Elbistan Vocat Sch Hlth Serv, Dept Opticianry, Kahramanmaras, Turkey

[3] Istiklal Univ, Dept Energy Syst Engn, Kahramanmaras, Turkey

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 11期

关键词：

ELECTRICAL-PROPERTIES; SPRAY-PYROLYSIS; ATTENUATION COEFFICIENTS; PHOTOCATALYTIC ACTIVITY; TEMPERATURE; IRRADIATION;

D O I：

10.1007/s10854-021-06097-w

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium oxide and boron-doped indium oxide thin films were produced using the spray pyrolysis method. XRD measurements were made to determine the structural properties of these synthesized films, and it was observed that the films had a cubic structure. Morphological properties were examined, and it was observed that films were generally homogeneous. It has been observed from the Uv-Vis spectrometer measurements that the transmittance rates increase with the boron doping. The mass and linear attenuation coefficients, half-value layer, mean free path and tenth value layer of different percentages for undoped and boron-doped thin films were investigated experimentally. Electron detector and 6 MeV energy electrons were used in irradiation to make these measurements. The experimental results determined that added boron to indium oxide thin films positively contributed to the radiation shielding property.

引用

页码：15484 / 15490

页数：7

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