Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals

被引：28
|
作者：
Yu, XG [1 ]
Yang, DR [1 ]
Ma, XY [1 ]
Li, H [1 ]
Shen, YJ [1 ]
Tian, DX [1 ]
Li, LB [1 ]
Que, DL [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 250卷 / 3-4期
关键词：
doping; gettering; Czochralski silicon;
D O I：
10.1016/S0022-0248(02)02487-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The intrinsic gettering (IG) of germanium-doped Czochralski (GCZ) silicon with different concentrations of germanium has been investigated in this paper. The conventional Czochralski (CZ) and the GCZ silicon samples were annealed using a one-step high temperature process followed by a sequence of low-high temperature annealing cycles. It was found that the good defect-free denude zones in the near surface of the GCZ silicon could be achieved using simply a one-step high temperature annealing process. Furthermore, the density of bulk microdefects as IG sites was higher than that in the CZ silicon, as a result of germanium enhancing oxygen precipitation during three-step annealing. Meanwhile, the experimental results showed that germanium also enhanced the out-diffusion of oxygen. Furthermore, it is believed that germanium doping can increase the ability of IG in CZ silicon wafers. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：359 / 363
页数：5
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