Nitrogen-carbon graphite-like semiconductor synthesized from uric acid

被引：23

作者：

Dante, Roberto C. ^{[1
]}

Chamorro-Posada, Pedro ^{[2
,3
]}

Vazquez-Cabo, Jose ^{[4
]}

Rubinos-Lopez, Oscar ^{[4
]}

Sanchez-Arevalo, Francisco M. ^{[5
]}

Huerta, Lazaro ^{[5
]}

Martin-Ramos, Pablo ^{[6
]}

Lartundo-Rojas, Luis ^{[7
]}

Avila-Vega, Carlos F. ^{[8
]}

Rivera-Tapia, Edgar D. ^{[9
]}

Fajardo-Pruna, Cristian A. ^{[10
]}

Avila-Vega, Alvaro J. ^{[11
]}

Solorza-Feria, Omar ^{[12
]}

机构：

[1] 2Dto3D Srls, Res Dev & Innovat, Via Revalanca 5, I-12036 Revello, CN, Italy

[2] Univ Valladolid, ETSI Telecomunicac, Dept Teoria Senal & Comunicac, Paseo Belen 15, Valladolid 47011, Spain

[3] Univ Valladolid, ETSI Telecomunicac, IT, Paseo Belen 15, Valladolid 47011, Spain

[4] Univ Vigo, ETSI Telecomunicac, Dept Teoria Senal & Comunicac, Lagoas Marcosende S-N, Vigo, Spain

[5] Univ Nacl Autonoma Mexico, Inst Invest Mat, Apdo Postal 70-360, Mexico City 04510, DF, Mexico

[6] Univ Zaragoza, Inst Univ Ciencias Ambientales Aragon IUCA, EPS, Carretera Cuarte S-N, Huesca 22071, Spain

[7] UPALM, Ctr Nanociencias & Micro & Nanotecnol Nanociencia, Inst Politecn Nacl, Mexico City 07738, DF, Mexico

[8] EPN, Escuela Politecn, Dept Ingn Civil & Ambiental, Ladron Guevara E11-253, Quito, Ecuador

[9] Newcastle Univ, Sch Mech Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[10] Escuela Politec Nacl, Dept Formac Basica, Ladron Guevara E11-253, Quito, Ecuador

[11] Inst Nacl Eficiencia Energet & Energias Renovable, Inaquito N3537 & Juan Pablo Saenz, Quito, Ecuador

[12] IPN, CINVESTAV, Ctr Invest & Estudios Avanzados, Dept Quim, Ave IPN 2508,Apdo Postal 14-740, Mexico City 07360, DF, Mexico

来源：

CARBON | 2017年 / 121卷

关键词：

Carbon nitride; Nitrogen-carbon materials; Organic semiconductor; THz spectroscopy; Uric acid; DIFFERENTIAL-OVERLAP TECHNIQUE; TIME-DOMAIN SPECTROSCOPY; DOPED GRAPHENE; ELECTRONIC-STRUCTURE; INTERMEDIATE NEGLECT; OPTICAL-PROPERTIES; NITRIDE; TRANSITION; MORPHOLOGY; NANOTUBES;

D O I：

10.1016/j.carbon.2017.05.098

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new carbon-nitrogen organic semiconductor has been synthesized by pyrolysis of uric acid. This layered carbon-nitrogen material contains imidazole-, pyridine (naphthyridine)-and graphitic-like nitrogen, as evinced by infrared and X-ray photoelectron spectroscopies. Quantum chemistry calculations support that it would consist of a 2D polymeric material held together by hydrogen bonds. Layers are stacked with an interplanar distance between 3.30 and 3.36 angstrom, as in graphite and coke. Terahertz spectroscopy shows a behavior similar to that of amorphous carbons, such as coke, with non-interacting layers. This material features substantial differences from polymeric carbon nitride, with some characteristics closer to those of nitrogen-doped graphene, in spite of its higher nitrogen content. The direct optical band gap, dependent on the polycondensation temperature, ranges from 2.10 to 2.32 eV. Although in general the degree of crystallinity is low, in the material synthesized at 600 C-circle some spots with a certain degree of crystallinity can be found. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：368 / 379

页数：12

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