Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement

The BaSIC (DMM) topology has been experimentally demonstrated to improve the short-circuit time for a 1.2 kV SiC power MOSFET product from 4.8 mu s to 7.9 mu s with a 17% increase in on-state resistance by utilizing a commercially available 100 V rated Gate-Source-Shorted (GSS) Si Depletion-Mode power MOSFET (DMM). The optimization of the Si GSS-DMM is discussed in this paper to achieve even superior performance, namely larger short-circuit time with less increase in on-resistance. It is theoretically demonstrated for the first time that a highly desirable short-circuit time of 10 mu s, similar to Si IGBTs, can be achieved for two SiC power MOSFET products with less than 3% increase in on-resistance. This was accomplished by reducing the breakdown voltage rating of the Si GSS-DMM from 100 V to 30 V, altering the cell design parameters, and utilizing the trench-gate design. The theoretical analysis provided in this paper provides valuable design guidelines for manufacturers of Si GSS-DMM devices to achieve optimum performance for use in the BaSIC(DMM) topology.