Preparation and characterization of Cu(In, Ga) (Se, S)2 thin films by sulfurization of electrodeposited, Cu(In,Ga)Se2 precursors

The solar cell light absorber Cu(In, Ga) (Se, S)(2) (CIGSS) thin films were prepared by annealing the electrodeposited Cu(In, Ga)Se-2 (CIGS) precursors in H2S ambient at 500 degrees C. The precursors and annealed films were characterized by energy dispersive X-ray spectroscopy, Auger electron spectroscopy, scanning electron microscopy, X-ray diffraction and Raman scattering. The results show that the complete removal of oxygen atom from the film and a substitution of Se by S can be achieved by H2S-annealing. Furthermore, the depth profiles of constituent elements become more uniform, and the Cu-Se micro-phase can be eliminated by H2S-annealing. Moreover, the CIGSS films have good crystallinity and smaller crystal lattice parameters with S and Ga incorporation into the chalcopyrite structure.