Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiency

被引：1
作者：
Mialichi, J. R. [1 ]
Frateschi, N. C. [1 ,2 ]
机构：
[1] Univ Estadual Campinas, UNICAMP, Dept Appl Phys, Device Res Lab,Gleb Wataghin Phys Inst, BR-13083970 Campinas, SP, Brazil
[2] Univ Estadual Campinas, UNICAMP, Ctr Semicond Cpds, BR-13083970 Campinas, SP, Brazil
来源：
JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 15期
基金：
巴西圣保罗研究基金会;
关键词：
Atomic force microscopy; Computer simulation; Diffusion; Nanostructures; Chemical beam epitaxy; Semiconducting III-V materials; CHEMICAL BEAM EPITAXY; OPTICAL CHARACTERIZATION; ROOM-TEMPERATURE; DASH LASERS; MU-M; INP; WELLS;
D O I：
10.1016/j.jcrysgro.2010.04.044
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We present the growth of stacked layers of InAs quantum dots directly on high bandgap In0.68Ga0.32As0.7P0.3 (lambda(g) = 1420 nm) barriers. The quaternary material is lattice matched to InP forming a double hetero-structure. Indium flux, number of InAs stacked layers and InGaAsP inner separation layer thickness were investigated. Photoluminescence (PL) and atomic force microscopy (AFM) analysis indicate the occurrence of gallium diffusion and the arsenic/phosphorus (As/P) exchange with the InGaAsP barriers. As a result, shorter wavelength emission is observed, making the structures suitable for telecom applications. (C) 2010 Elsevier B.V. All rights reserved.
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收藏
页码：2279 / 2283
页数：5
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