A 22.5-30.5GHz CMOS Power Amplifier Using Pole -tuning Technique for 5G Applications

被引：0

作者：

Hou, Haomin ^{[1
]}

He, Jin ^{[1
]}

Peng, Yao ^{[1
]}

Deng, Tianchuan ^{[1
]}

Cao, Zhiyuan ^{[1
]}

Wang, Hao ^{[1
]}

Chang, Sheng ^{[1
]}

Huang, Qijun ^{[1
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China

来源：

2019 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2019) | 2019年

基金：

中国博士后科学基金;

关键词：

5G applications; CMOS; power amplifier; poletuning technique; wideband;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A four-stage wideband power amplifier (PA) using pole-tuning technique is presented for 5G applications. By tuning the relative pole position of each stage at different frequencies, the PA achieves a flat gain response over a wide bandwidth. To avoid transistor breakdown and hot carrier effect, self-biased cascode amplifiers are implemented in the first two stages. Common source amplifiers are utilized to ensure high output power. The PA was designed and simulated based on a 0.13 um CMOS process. The post-simulation result exhibits a peak gain of 22.2 dB at 28 GHz with -3-dB bandwidth of 8 GHz. The saturated output power (P.() and output 1 dB compression point (Pima) are 11.6 dBm and 7.8 dBm, respectively. The peak power added efficiency (PAE) is 17.3% The power consumption is 76 mW.

引用

页数：3

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