Novel ultra-low power RF lateral BJT on SOI-CMOS compatible substrate

被引：0

作者：

Sun, I-Shan Michael ^{[1
]}

Ng, Wai Tung ^{[1
]}

Mochizuki, Hidenori ^{[1
]}

Kanekiyo, Koji ^{[1
]}

Kobayashi, Takaaki ^{[1
]}

Toita, Masato ^{[1
]}

Imai, Hisaya ^{[1
]}

Ishikawa, Akira ^{[1
]}

Tamura, Satoru ^{[1
]}

Takasuka, Kaoru ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS | 2005年

关键词：

BiCMOS integrated circuits; silicon bipolar transistors; SOI; RF system-on-chip (RF SoC); lateral BJTs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a novel ultra-low power RF LBJT on SOL The fabrication process relies on polysilicon side-wall-spacer (PSWS) to self-atigned the base contact to the intrinsic base in the 100 nm range. The fabricated LBJTs exhibits superior Johnson's product (f(tau) x BVCEO) in the range between 190-300 GHz.V. The f(max) of the optimal device reaches 46 GHz at collector current density of only 0.15 m/mu m(2). Both figure-of-merit are in-line with advanced SiGe-HBT device, and superior than previously published data on lateral BJTs. This LBJT is built on SOI-CMOS compatible substrate, and is an ideal candidate for SOI-BiCMOS integration for RF and mixed-signal SoC.

引用

页码：317 / 320

页数：4

共 8 条

[1] Vertical SiGe-Base bipolar transistors on CMOS-compatible SOI substrate
Cai, J
Kumar, M
Steigerwalt, M
Ho, H
Schonenberg, K
Stein, K
Chen, HJ
Jenkins, K
Ouyang, QQ
Oldiges, P
Ning, T
[J]. PROCEEDINGS OF THE 2003 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2003, : 215 - 218
[2] JOSEPH A, 2004, SMIC, P1
[3] A novel lateral bipolar transistor with 67 GHz fmax on thin-film SOI for RF analog applications
Nii, H
Yamada, T
Inoh, K
Shino, T
Kawanaka, S
Yoshimi, M
Katsumata, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (07) : 1536 - 1541
[4] Why BiCMOS and SOIBiCMOS?
Ning, TH
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2002, 46 (2-3) : 181 - 186
[5] Horizontal current bipolar transistor (HCBT) process variations for future RF BiCMOS applications
Suligoj, T
Sin, JKO
Wang, KL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1392 - 1398
[6] Sun ISM, 2005, INT SYM POW SEMICOND, P99
[7] Lateral high-speed bipolar transistors on SOI for RF SoC applications
Sun, ISM
Ng, WT
Kanekiyo, K
Kobayashi, T
Mochizuki, H
Toita, M
Imai, H
Ishikawa, A
Tamura, S
Takasuka, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1376 - 1383
[8] A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications
Washio, K
Ohue, E
Shimamoto, H
Oda, K
Hayami, R
Kiyota, Y
Tanabe, M
Kondo, M
Hashimoto, T
Harada, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (02) : 271 - 278

← 1 →