Two channels of non-radiative recombination in InGaN/GaN LEDs

被引：18

作者：

Averkiev, N. S. ^{[1
]}

Chernyakov, A. E. ^{[1
]}

Levinshtein, M. E. ^{[1
]}

Petrov, P. V. ^{[1
]}

Yakimov, E. B. ^{[2
]}

Shmidt, N. M. ^{[1
]}

Shabunina, E. I. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] RAS, Inst Microelect Technol, Chernogolovka 142432, Russia

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期

基金：

俄罗斯基础研究基金会;

关键词：

Point defects; Extended defect systems;

D O I：

10.1016/j.physb.2009.08.252

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of low-frequency noise study in blue InGaN/GaN light emitting diodes (LEDs) allow to suppose that there are two non-radiative recombination channels in InGaN/GaN LEDs: one of them is related to the extended defect system piercing the LED active region and other is related with the presence of point defects. The generation of new defects under current density more than 10 A/cm(2) was found. This process is reversible up to operation current density of about 200 A/cm(2). (C) 2009 Elsevier By. All rights reserved.

引用

页码：4896 / 4898

页数：3

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