Transistor mismatch in 32 nm high-k metal-gate process

被引：1

作者：

Yuan, X. ^{[1
]}

Shimizu, T. ^{[2
]}

Mahalingam, U. ^{[3
]}

Brown, J. S. ^{[1
]}

Habib, K. ^{[1
]}

Tekleab, D. G. ^{[1
]}

Su, T. -C. ^{[1
]}

Satadru, S. ^{[3
]}

Olsen, C. M. ^{[1
]}

Lee, H. ^{[4
]}

Pan, L. -H. ^{[1
]}

Hook, T. B. ^{[1
]}

Han, J. -P. ^{[5
]}

Park, J. -E. ^{[1
]}

Na, M. -H. ^{[1
]}

Rim, K. ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Hopewell Jct, NY 12533 USA

[2] NEC Elect, Hopewell Jct, NY 12533 USA

[3] Global Foundries, Hopewell Jct, NY 12533 USA

[4] Samsung Elect, Hopewell Jct, NY 12533 USA

[5] Infineon Technol N Amer, Hopewell Jct, NY 12533 USA

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 10期

关键词：

D O I：

10.1049/el.2010.0343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transistor mismatch data and analysis from state-of-the-art high-k/metal-gate (HKMG) technology are presented. By normalising mismatch data against oxide thickness (T-INV), threshold voltage (V-TH), and effective work function, direct comparison of V-TH mismatch from various device types is made. It is quantitatively demonstrated that effective work function variation (EWFV) does not generate significant V-TH variability in the present HKMG technology.

引用

页码：708 / U66

页数：2

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