ZnO nanostructures for optoelectronics: Material properties and device applications

被引:920
作者
Djurisic, A. B. [1 ]
Ng, A. M. C. [1 ]
Chen, X. Y. [1 ]
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
关键词
ZnO; Nanomaterials; LEDs; Photovoltaics; ZINC-OXIDE NANOSTRUCTURES; LIGHT-EMITTING-DIODES; HYBRID SOLAR-CELLS; OPTICAL-PROPERTIES; NANOWIRE ARRAYS; CONTROLLED GROWTH; NANOROD ARRAYS; ULTRAVIOLET ELECTROLUMINESCENCE; LUMINESCENCE PROPERTIES; LOW-TEMPERATURE;
D O I
10.1016/j.pquantelec.2010.04.001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In recent years, there has been increasing interest in ZnO nanostructures due to their variety of morphologies and availability of simple and low cost processing. While there are still unanswered questions concerning fundamental properties of this material, in particular those related to defects and visible luminescence lines, great progress has been made in synthesis methods and device applications of ZnO nanostructures. In this review, we will provide a brief overview of synthesis methods of ZnO nanostructures, with particular focus on the growth of perpendicular arrays of nanorods/nanowires which are of interest for optoelectronic device applications. Then, we will provide an overview of material properties of ZnO nanostructures, issues related to doping with various elements to achieve either p- or n-type conductivity. Doping to alter optical or magnetic properties will also be discussed. Then, issues related to practical problems in achieving good electrical contacts to nanostructures will be presented. Finally, we will provide an overview of applications of ZnO nanostructures to light-emitting devices, photodetectors and solar cells. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:191 / 259
页数:69
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