Measurement of frequency dispersion of AlGaN/GaN high electron mobility transistors

被引：12

作者：

Mizutani, T ^{[1
]}

Makihara, H ^{[1
]}

Akita, M ^{[1
]}

Ohno, Y ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 2A期

关键词：

AlGaN/GaN HEMT; frequency dispersion; low-frequency noise; activation energy;

D O I：

10.1143/JJAP.42.424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Frequency dispersion of the drain conductance was observed in AlGaN/GaN high electron mobility transistors (HEMTs). The transition frequency shifted to higher frequencies with increasing temperature. The activation energy for the change of the transition frequency was 0.47 eV, which was almost the same as that obtained by the measurement of the temperature dependence of the low-frequency noise.

引用

页码：424 / 425

页数：2

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