RHEED metrology of Stranski-Krastanov quantum dots

被引：24

作者：

Feltrin, A. ^{[1
]}

Freundlich, A. ^{[1
]}

机构：

[1] Univ Houston, Photovolt & Nanostruct Labs, Ctr Adv Mat, Houston, TX 77204 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

基金：

美国国家航空航天局;

关键词：

computer simulation; reflection high-energy electron diffraction; nanostructures; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.11.294

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Reflection high-energy electron diffraction (RHEED) patterns of uncapped pyramidal shaped InAs Stranski-Krastanov quantum dots fabricated on GaAs (0 0 1) substrate are investigated theoretically. Clear correlations between features in the RHEED images and quantum dot structural properties, as quantum dot facet orientation and quantum dot height, are established. In particular, it is shown that lateral facet orientation and dot heights can be directly extracted from the characteristic chevron angles and predicted intensity oscillations along the chevron tails, respectively. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：38 / 41

页数：4

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