A New BODIPY Material for Pure Color and Long Lifetime Red Hyperfluorescence Organic Light-Emitting Diode

被引:56
作者
Jung, Young Hun [1 ]
Karthik, Durai [1 ]
Lee, Hyuna [1 ]
Maeng, Jee Hyun [1 ]
Yang, Ki Joon [1 ]
Hwang, Soonjae [1 ]
Kwon, Jang Hyuk [1 ]
机构
[1] Kyung Hee Univ, Dept Informat Display, Organ Optoelect Device Lab, Seoul 02447, South Korea
基金
新加坡国家研究基金会;
关键词
BODIPY; hyperfluorescence; photophysical properties; red OLED; operating lifetime; ACTIVATED DELAYED FLUORESCENCE; ENERGY-GAP LAW; EFFICIENCY; DYES; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; DERIVATIVES; CONVERSION; PROBES; LASER;
D O I
10.1021/acsami.1c03175
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A red fluorescent material, 1,3,7,9-tetrakis(4-(tert-butyl)-phenyl)-5,5-difluoro-10-(2-methoxyphenyl)-5H-4l4,5l4-dipyrrolo[1,2-c:2',1'-f][1,3,2]diazaborinine (4tBuMB), as an emitting dopant in a thermally activated delayed fluorescence (TADF) sensitized hyperfluorescence organic light-emitting diode (HFOLED) is reported. The 4tBuMB shows a high photoluminescence quantum yield (PLQY) of 99% with an emission maximum at 620 nm and a full width at half-maximum (fwhm) of 31 nm in solution. Further, it shows a deep lowest unoccupied molecular orbital (LUMO) of 3.83 eV. Thus, two TADF materials, 4CzIPN and 4CzTPN, as sensitizing hosts, are selected on the basis of a suitable LUMO level and spectrum overlap with 4tBuMB. The fabricated HFOLED device with 4CzTPN as a sensitizing host and 4tBuMB as an emitting dopant shows a maximum external quantum efficiency (EQE), an emission maximum, an fwhm, and CIE coordinates of 19.4%, 617 nm, 44 nm, and (0.64, 0.36), respectively. The electroluminance performances of the 4CzTPN sensitized device are higher than those of the 4CzIPN-based device, which is attributed to a higher Forster resonance energy transfer (FRET) rate and reduced intersystem crossing/reverse intersystem crossing (ISC/RISC) cycles of the former. Also, the 4CzTPN-based HF device shows a longer device lifetime (LT90) of 954 h than the 4CzIPN-baed device (LT90 of 57 h) at 3000 cd m(-2). The higher device stability is due to the higher bond dissociation energies (BDEs) of 4CzTPN and 4tBuMB than that of 4CzIPN.
引用
收藏
页码:17882 / 17891
页数:10
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