Inkjet Printed Circuits with 2D Semiconductor Inks for High-Performance Electronics

被引：59

作者：

Carey, Tian ^{[1
,2
]}

Arbab, Adrees ^{[1
,2
]}

Anzi, Luca ^{[3
]}

Bristow, Helen ^{[2
]}

Hui, Fei ^{[4
]}

Bohm, Sivasambu ^{[1
,2
]}

Wyatt-Moon, Gwenhivir ^{[5
]}

Flewitt, Andrew ^{[5
]}

Wadsworth, Andrew ^{[2
]}

Gasparini, Nicola ^{[2
]}

Kim, Jong M. ^{[5
]}

Lanza, Mario ^{[6
]}

McCulloch, Iain ^{[7
,8
]}

Sordan, Roman ^{[3
]}

Torrisi, Felice ^{[1
,2
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge Graphene Ctr, Cambridge CB3 0FA, England

[2] Imperial Coll London, Dept Chem, Mol Sci Res Hub, White City Campus,Wood Lane, London W12 0BZ, England

[3] Politecn Milan, Dept Phys, L NESS, Via Anzani 42, I-22100 Como, Italy

[4] Technion Israel Inst Technol, Dept Mat Sci & Engn, IL-3200003 Haifa, Israel

[5] Univ Cambridge, Dept Engn, CAPE Bldg, Cambridge CB3 0FA, England

[6] King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia

[7] King Abdullah Univ Sci & Technol KAUST, KAUST Solar Ctr KSC, Thuwal 239556900, Saudi Arabia

[8] Univ Oxford, Dept Chem, Chem Res Lab, Oxford OX1 3TA, England

来源：

ADVANCED ELECTRONIC MATERIALS | 2021年 / 7卷 / 07期

基金：

英国工程与自然科学研究理事会; 中国国家自然科学基金; 欧盟地平线“2020”;

关键词：

2D materials; CMOS; molybdenum disulfide; printed electronics; printed logic; 2-DIMENSIONAL MATERIALS; GRAPHENE; EXFOLIATION; TRANSISTORS; NANOSHEETS; FILMS;

D O I：

10.1002/aelm.202100112

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with 2D materials have the potential to enable the next generation of high performance low-cost printed digital electronics. Here, the authors demonstrate air-stable, low voltage (<5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2), and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating an average switching time of tau(MoS2) approximate to 4.1 mu s for the MoS2 FETs. They achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. They then integrate MoS2 and IDT-BT FETs to realize inkjet-printed complementary logic inverters with a voltage gain |A(v)| approximate to 4 when in resistive load configuration and |A(v)| approximate to 1.4 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.

引用

页数：10

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