Electrical switching and phase transformation in silver selenide nanowires

被引:107
作者
Schoen, David T. [1 ]
Xie, Chong [1 ]
Cui, Yi [1 ]
机构
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
AG2SE; STATE;
D O I
10.1021/ja068365s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report for the first time the electrical transport in solid-state electrolyte nanowires. Single nanowire transport and in situ transmission electron microscopy studies show that Ag2Se nanowires can be high conducting orthorhombic beta-Ag2Se or low conducting cubic alpha-Ag2Se. It is also the first time that alpha-Ag2Se is found to be stable at room temperature. A threshold switching phenomenon exists in the low conducting alpha-Ag2Se with an on-off ratio up to 7 order magnitude. These results provide useful new information for exploring solid-state electrolyte nanowires as resistive switching memory devices.
引用
收藏
页码:4116 / +
页数:3
相关论文
共 12 条
[1]   POLARIZED MEMORY SWITCHING EFFECTS IN AG2SE/SE/M THIN-FILM SANDWICHES [J].
BERNEDE, JC ;
CONAN, A ;
FOUESNANT, E ;
ELBOUCHAIRI, B ;
GOUREAUX, G .
THIN SOLID FILMS, 1982, 97 (02) :165-171
[2]  
DAMODARA DV, 1990, J APPL PHYS, V68, P2105
[3]  
Gates B, 2002, ADV FUNCT MATER, V12, P679, DOI 10.1002/1616-3028(20021016)12:10<679::AID-ADFM679>3.0.CO
[4]  
2-#
[5]   Single-crystalline nanowires of Ag2Se can be synthesized by templating against nanowires of trigonal Se [J].
Gates, B ;
Wu, YY ;
Yin, YD ;
Yang, PD ;
Xia, YN .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2001, 123 (46) :11500-11501
[6]   Ag+ dynamics in the superionic and liquid phases of Ag2Se and Ag2Te by coherent quasi-elastic neutron scattering [J].
Hamilton, MA ;
Barnes, AC ;
Howells, WS ;
Fischer, HE .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (11) :2425-2436
[7]   Nanoscale memory elements based on solid-state electrolytes [J].
Kozicki, MN ;
Park, M ;
Mitkova, M .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (03) :331-338
[8]   Structural, electrical and optical properties of silver selenide thin films [J].
Kumar, MCS ;
Pradeep, B .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (03) :261-265
[9]   MODEL FOR THE ON STATE OF AMORPHOUS-CHALCOGENIDE THRESHOLD SWITCHES [J].
PETERSEN, KE ;
ADLER, D .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5065-5072
[10]   Nanometer-scale switches using copper sulfide [J].
Sakamoto, T ;
Sunamura, H ;
Kawaura, H ;
Hasegawa, T ;
Nakayama, T ;
Aono, M .
APPLIED PHYSICS LETTERS, 2003, 82 (18) :3032-3034