Metal-induced gap states at InAs(110) surface

被引：11

作者：

Betti, MG ^{[1
]}

Bertoni, G ^{[1
]}

Corradini, V ^{[1
]}

De Renzi, V ^{[1
]}

Mariani, C ^{[1
]}

机构：

[1] Univ Modena, INFM, Dipartimento Fis, I-41100 Modena, Italy

来源：

SURFACE SCIENCE | 2000年 / 454卷 / 01期

关键词：

indium arsenide; metal-semiconductor interfaces; photoemission (total yield); Schottky barrier;

D O I：

10.1016/S0039-6028(00)00065-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-luminosity and high-energy-resolution photoemission spectroscopy call provide direct observation of the spectral density of metal-induced states throughout the whole band gap, even at extremely low metal deposition. We present a study of the density of states of a two-dimensional electron gas induced in the InAs(110) conduction band by deposition of caesium, antimony and silver adatoms. We follow the density of states redistribution between the two-dimensional electron-gas channel and the appearance of metal-induced gap states. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：539 / 542

页数：4

共 19 条

[11] FORMATION OF METAL GAAS(110) INTERFACES STUDIED BY SCANNING TUNNELING MICROSCOPY
FEENSTRA, RM
[J]. APPLIED SURFACE SCIENCE, 1992, 56-8 : 104 - 116
[12] GEOMETRIC AND ELECTRONIC-STRUCTURE OF ANTIMONY ON THE GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY
MARTENSSON, P
FEENSTRA, RM
[J]. PHYSICAL REVIEW B, 1989, 39 (11): : 7744 - 7753
[13] Evolution of one-dimensional Cs chains on InAs(110) as determined by scanning-tunneling microscopy and core-level spectroscopy
Modesti, S
Falasca, A
Polentarutti, M
Betti, MG
De Renzi, V
Mariani, C
[J]. SURFACE SCIENCE, 2000, 447 (1-3) : 133 - 142
[14] TIGHT-BINDING MODEL OF SURFACE DONOR-STATES INDUCED BY METAL ADATOMS ON GAAS(110) SURFACES
MONCH, W
[J]. EUROPHYSICS LETTERS, 1988, 7 (03): : 275 - 279
[15] NOVAK C, 1995, SURF SCI, V331, P619
[16] Charge accumulation at InAs surfaces
Olsson, LO
Andersson, CBM
Hakansson, MC
Kanski, J
Ilver, L
Karlsson, UO
[J]. PHYSICAL REVIEW LETTERS, 1996, 76 (19) : 3626 - 3629
[17] THEORETICAL APPROACHES TO THE SCHOTTKY-BARRIER PROBLEM
OSSICINI, S
[J]. APPLIED SURFACE SCIENCE, 1992, 56-8 : 290 - 300
[18] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION
SPICER, WE
CHYE, PW
SKEATH, PR
SU, CY
LINDAU, I
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1422 - 1433
[19] SCHOTTKY BARRIERS AND SEMICONDUCTOR BAND STRUCTURES
TERSOFF, J
[J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6968 - 6971

← 1 2 →