Metal-induced gap states at InAs(110) surface

被引：11
作者：
Betti, MG [1 ]
Bertoni, G [1 ]
Corradini, V [1 ]
De Renzi, V [1 ]
Mariani, C [1 ]
机构：
[1] Univ Modena, INFM, Dipartimento Fis, I-41100 Modena, Italy
来源：
SURFACE SCIENCE | 2000年 / 454卷 / 01期
关键词：
indium arsenide; metal-semiconductor interfaces; photoemission (total yield); Schottky barrier;
D O I：
10.1016/S0039-6028(00)00065-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
High-luminosity and high-energy-resolution photoemission spectroscopy call provide direct observation of the spectral density of metal-induced states throughout the whole band gap, even at extremely low metal deposition. We present a study of the density of states of a two-dimensional electron gas induced in the InAs(110) conduction band by deposition of caesium, antimony and silver adatoms. We follow the density of states redistribution between the two-dimensional electron-gas channel and the appearance of metal-induced gap states. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：539 / 542
页数：4
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