Dynamical behavior of entanglement in semiconductor microcavities

被引：20
作者：
Barzanjeh, Sh. [3 ]
Eleuch, H. [1 ,2 ,4 ]
机构：
[1] Texas A&M Univ, Inst Quantum Studies, College Stn, TX 77843 USA
[2] Texas A&M Univ, Dept Phys & Astron, College Stn, TX 77843 USA
[3] Univ Isfahan, Fac Sci, Dept Phys, Hezar Jerib, Isfahan, Iran
[4] Abdus Salam Int Ctr Theoret Phys, ICIP, Trieste, Italy
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 08期
关键词：
Semiconductor cavity QED; Exciton; Quantum well; Wehrl entropy; Generalized concurrence; PHASE-SPACE MEASUREMENT; AUTOCORRELATION FUNCTION; PROGRESSIVE DECOHERENCE; SAMPLING ENTROPIES; EMITTING FIELD; QUANTUM; STATES; NOISE; LASER;
D O I：
10.1016/j.physe.2010.03.032
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate the evolution of entanglement in a semiconductor cavity QED containing a quantum well. By using the Wehrl entropy and introducing generalized concurrence as entanglement measures, we study the influence of the system parameters on the evolution features of the entanglement. (C) 2010 Elsevier B.V. All rights reserved,
引用
收藏
页码：2091 / 2096
页数：6
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