Unravelling p-n Conduction Transition in High Thermoelectric Figure of Merit Gallium-Doped Bi2Te3 via Phase Diagram Engineering

被引：22
作者：
Lin, Chun-han [1 ,2 ]
Yen, Wan-ting [1 ]
Tsai, Yi-fen [1 ]
Wu, Hsin-jay [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan
来源：
ACS APPLIED ENERGY MATERIALS | 2020年 / 3卷 / 02期
关键词：
thermoelectric materials; Bi2Te3; phase diagram engineering; figure of merit (zT); p-n transition; THERMAL-CONDUCTIVITY; PERFORMANCE; SB;
D O I：
10.1021/acsaem.9b02500
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We revisit the well-established Bi2Te3 via phase diagram engineering. Along with a phase diagram in hand, it is realized that the solubility of Ga in Bi2Te3 is coincident with the p-n transition zone in Ga-Bi2Te3 alloys. The best-performing n-type (Bi2Te3)(0.93)(Ga2Te5)(0.07) possesses a peak zT similar to 1.5 at 300 K, which is attributed to the reduced kappa similar to 1.8 W m(-1) K-1 and the low-lying rho. The p-type Bi1.99Ga0.01Te3 also exhibits a peak zT of 1.2 at 300 K In other words, the addition of Ga leads to high-zT p-type or n-type bismuth-tellurides, which simplifies the conventional synthesis route that usually involves different dopants.
引用
收藏
页码：1311 / 1318
页数：15
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