Gas-sensitive characteristics of metal/semiconductor polymer Schottky device

被引：97

作者：

Campos, M

Bulhoes, LOS

Lindino, CA

机构：

[1] Univ Paulista, BR-14024270 Ribeirao Preto, SP, Brazil

[2] Univ Fed Sao Carlos, Dept Quim, BR-13560970 Sao Carlos, SP, Brazil

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 87卷 / 1-2期

基金：

巴西圣保罗研究基金会;

关键词：

conducting polymers; rectification; Schottky barrier; polyaniline; sensor;

D O I：

10.1016/S0924-4247(00)00465-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal/polymer Schottky barrier diodes have been fabricated using electrochemically prepared films of polyaniline as the semiconductor and aluminium as the metal. Polyaniline was doped with HCl at room temperature to form a p-type semiconductor. On a sandwich-type device, the junction at Al/polyaniline showed rectifying behavior, and was used as a sensor for the detection of methane gas. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics have been studied at room temperature, and the shifts in the I-V and C-V dependence of the diodes were measured with different concentrations of gas for different time intervals. The data have been analysed and interpreted on the basis of the thermionic emission mechanism. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：67 / 71

页数：5

共 30 条

[1] PRESSURE-DEPENDENT OPERATION IN POLY(3-ALKYLTHIOPHENE) FIELD-EFFECT TRANSISTORS AND SCHOTTKY DIODES [J].