Chemical vapor deposition and electrical characterization of sub-10 nm diameter InSb nanowires and field-effect transistors

被引：27

作者：

Paul, Rajat Kanti ^{[1
]}

Penchev, Miroslav ^{[2
]}

Zhong, Jiebin ^{[1
]}

Ozkan, Mihrimah ^{[2
]}

Ghazinejad, Maziar ^{[1
]}

Jing, Xiaoye ^{[2
]}

Yengel, Emre ^{[2
]}

Ozkan, Cengiz S. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 121卷 / 03期

基金：

美国国家科学基金会;

关键词：

InSb nanowires; Semiconductor; CVD; Crystal structure; Field-effect transistor; ONE-DIMENSIONAL NANOSTRUCTURES; GROWTH; INDIUM;

D O I：

10.1016/j.matchemphys.2010.01.056

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth temperature and time, was investigated. High aspect ratio InSb nanowires, having a diameter of about 5-10 nm, were grown at 400 degrees C for 1 h on InSb (1 1 1) substrate onto which 60 nm Au particle was used as a metal catalyst. The synthesized InSb nanowires had zinc blend single crystal structure without any stacking faults, and they were covered with a thin (similar to 1 nm thick) amorphous layer. Electrical characterization of InSb nanowires was conducted utilizing a back-gated SNWFET. Device characterization demonstrated that NWs were n-type and exhibited a high I-on/I-off ratio of 10(6) and device resistance of 250 k Omega. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：397 / 401

页数：5

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