Effect of high temperature steam annealing for SiO2 passivation

被引：3

作者：

Abe, Y

Nagayoshi, H

Kawaba, T

Arai, N

Saitoh, T

Kamisako, K

机构：

[1] Tokyo Univ Agr & Technol, Fac Technol, Koganei, Tokyo 1848588, Japan

[2] Shonan Inst Technol, Fujisawa, Kanagawa 2518511, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 65卷 / 1-4期

关键词：

high temperature steam annealing; SiO2; passivation; post-annealing; hydrogen-radical annealing;

D O I：

10.1016/S0927-0248(00)00148-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We introduced high-temperature steam annealing (HSA) as a low-cost acid effective postannealing method for c-Si solar cell processing. The annealing effects were analyzed by measuring effective lifetime and C-V characteristics and were compared with the effects of forming gas annealing (FGA) and hydrogen-radical annealing (I-IRA). By using this method, effective lifetime of a SiO2-coated wafer was increased in a very short annealing time compared to the conventional FGA. It was determined that the improvement of lifetime by HSA can be attributed to the decrease of interface state density. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：607 / 612

页数：6

共 5 条

[1] INSITU BULK LIFETIME MEASUREMENT ON SILICON WITH A CHEMICALLY PASSIVATED SURFACE [J].