Thermoelectric figure of merit of (In0.53Ga0.47As)0.8(In0.52Al0.48As)0.2 III-V semiconductor alloys

被引：29

作者：

Bahk, Je-Hyeong ^{[1
]}

Bian, Zhixi ^{[2
]}

Zebarjadi, Mona ^{[2
]}

Zide, Joshua M. O. ^{[3
]}

Lu, Hong ^{[1
,4
]}

Xu, Dongyan ^{[5
]}

Feser, Joseph P. ^{[5
]}

Zeng, Gehong ^{[1
]}

Majumdar, Arun ^{[5
]}

Gossard, Arthur C. ^{[4
]}

Shakouri, Ali ^{[2
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Cruz, Dept Elect Engn, Santa Cruz, CA 95064 USA

[3] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[5] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 23期

关键词：

SCATTERING; INSB; TRANSPORT; NANOWIRES; GROWTH; INAS; INP;

D O I：

10.1103/PhysRevB.81.235209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermoelectric figure of merit is measured and theoretically analyzed for n-type Si-doped InGaAlAs III-V quaternary alloys at high temperatures. The Seebeck coefficient, electrical conductivity, and thermal conductivity of a Si-doped (In0.53Ga0.47As)(0.8)(In0.52Al0.48As)(0.2) of 2 mu m thickness lattice matched to InP substrate grown by molecular-beam epitaxy are measured up to 800 K. The measurement results are analyzed using the Boltzmann transport theory based on the relaxation-time approximation and the theoretical calculation is extended to find optimal carrier densities that maximize the figure of merit at various temperatures. The figure of merit of 0.9 at 800 K is measured at a doping level of 1.9 x 10(18) cm(-3) and the theoretical prediction shows that the figure of merit can reach 1.3 at 1000 K at a doping level of 1.5 x 10(18) cm(-3).

引用

页数：6

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