Selectivity investigation of HfO2 to oxide using wet etching

被引：3

作者：

Kang, TK ^{[1
]}

Wang, CC ^{[1
]}

Tsui, BY ^{[1
]}

Li, YH ^{[1
]}

机构：

[1] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

来源：

2004 SEMICONDUCTOR MANUFACTURING TECHNOLOGY WORKSHOP PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/SMTW.2004.1393729

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experiments indicate that higher HfO2/oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO2 and C VD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO2 and annealed CVD oxides will result in considerably high HfO2/CVD oxide etching selectivity in IPA/HF solution.

引用

页码：87 / 90

页数：4

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