Direct determination of electron effective mass in GaNAs/GaAs quantum wells

被引：167
作者：
Hai, PN [1 ]
Chen, WM
Buyanova, IA
Xin, HP
Tu, CW
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期
关键词：
D O I：
10.1063/1.1311324
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron effective mass (m(e)*) in GaNxAs1-x/GaAs quantum wells (QWs) is investigated by the optically detected cyclotron resonance technique. The m(e)* values of 0.12m(0) and 0.19m(0) are directly determined for the 70-Angstrom-thick QWs with N composition of 1.2% and 2.0%, respectively. This sizable increase in the electron effective mass is consistent with the earlier theoretical predictions based on the strong interaction of the lowest conduction band states with the upper lying band states or impurity band induced by the incorporation of N. (C) 2000 American Institute of Physics. [S0003-6951(00)03038-2].
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页码：1843 / 1845
页数：3
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