Copper distribution behavior near a SiO2/Si interface by low-temperature (< 400°C) annealing and its influence on electrical characteristics of MOS-capacitors

被引:8
作者
Hozawa, K [1 ]
Itoga, T [1 ]
Isomae, S [1 ]
Yugami, J [1 ]
Ohkura, M [1 ]
机构
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源
2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年
关键词
D O I
10.1109/VLSIT.2000.852754
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The Cu re-distribution behavior near a SiO2/Si interface after low-temperature annealing is examined by using total reflection of X-ray fluorescence (TXRF) to simulate the effect of thermal budget in multi-level wiring processes. Cu atoms intentionally adsorbed on backside of the wafers were diffused and were once gettered at the gettering sites during high-temperature drive-in diffusion. However, after low-temperature annealing following the drive-in diffusion, Cu concentration of the Si surface was found to increase even in CZ wafers with intrinsic gettering process (IG). Cu atoms gettered in the vicinity of the SiO2/Si interface after drive-in diffusion are found to readily transport through the SiO2 film and reach the SiO2 surface during 400 degrees C annealing. This transport of Cu is found to cause degradation of thin SiO2 film. The re-distribution phenomenon during low-temperature annealing should be carefully controlled in order to realize highly reliable CMOS devices.
引用
收藏
页码:24 / 25
页数:2
相关论文
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[1]  
HOZAWA K, 1999, TECH DIG VLSI S TECH, P129