Copper distribution behavior near a SiO2/Si interface by low-temperature (< 400°C) annealing and its influence on electrical characteristics of MOS-capacitors
被引:8
作者:
Hozawa, K
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h-index: 0
机构:
Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, JapanHitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
Hozawa, K
[1
]
Itoga, T
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h-index: 0
机构:
Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, JapanHitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
Itoga, T
[1
]
Isomae, S
论文数: 0引用数: 0
h-index: 0
机构:
Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, JapanHitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
Isomae, S
[1
]
Yugami, J
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h-index: 0
机构:
Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, JapanHitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
Yugami, J
[1
]
Ohkura, M
论文数: 0引用数: 0
h-index: 0
机构:
Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, JapanHitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
Ohkura, M
[1
]
机构:
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源:
2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS
|
2000年
关键词:
D O I:
10.1109/VLSIT.2000.852754
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
The Cu re-distribution behavior near a SiO2/Si interface after low-temperature annealing is examined by using total reflection of X-ray fluorescence (TXRF) to simulate the effect of thermal budget in multi-level wiring processes. Cu atoms intentionally adsorbed on backside of the wafers were diffused and were once gettered at the gettering sites during high-temperature drive-in diffusion. However, after low-temperature annealing following the drive-in diffusion, Cu concentration of the Si surface was found to increase even in CZ wafers with intrinsic gettering process (IG). Cu atoms gettered in the vicinity of the SiO2/Si interface after drive-in diffusion are found to readily transport through the SiO2 film and reach the SiO2 surface during 400 degrees C annealing. This transport of Cu is found to cause degradation of thin SiO2 film. The re-distribution phenomenon during low-temperature annealing should be carefully controlled in order to realize highly reliable CMOS devices.