On the high-temperature (to 300 °C) characteristics of SiGeHBTs

被引：29

作者：

Chen, TB ^{[1
]}

Kuo, WML

Zhao, EH

Liang, QQ

Jin, ZR

Cressler, JD

Joseph, AJ

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] IBM Corp, Essex Jct, VT 05452 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 11期

关键词：

high-temperature characteristics; SiGe heterojunction; bipolar transistors (HBTs); stress;

D O I：

10.1109/TED.2004.836779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive investigation of the high-temperature characteristics of advanced SiGe heterojunction bipolar transistors (HBTs) is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are potentially well-suited for many electronics applications operating at temperatures as high as 300 degreesC.

引用

页码：1825 / 1832

页数：8

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