Tendency of crystal orientation rotation toward stable {001} during lateral crystal growth of Si thin film sandwiched by SiO2

被引：3

作者：

Yeh, Wenchang ^{[1
]}

Shirakawa, Toshiki ^{[1
]}

Anh Hoang Pham ^{[1
]}

机构：

[1] Shimane Univ, Grad Sch Nat Sci & Technol, 1060 Nishikawatsu Cho, Matsue, Shimane 6908504, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / SB期

关键词：

laser annel; thin film transistor; Chevron laser beam; silicon; Crystal orientation; EXCIMER-LASER CRYSTALLIZATION; SILICON FILMS; GLASS; RECRYSTALLIZATION; FABRICATION; TRANSISTORS; GRAINS;

D O I：

10.35848/1347-4065/abefaa

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stable crystal orientation (CO) for lateral growth of Si thin film sandwiched by SiO2 was evidenced to be only {001} in normal direction (ND {001}) and 100 +/- 5 degrees in scanning direction (SD 100). Crystal with ND{001} is quasi-stable when angle theta between inplane 110 and SD is among 15 degrees <= theta < 40 degrees and is unstable when theta is theta < 15 degrees. CO other than the stable CO will rotate spontaneously toward the stable CO, i.e. ND{001} with SD100 +/- 5 degrees. Most ND{001} crystal was ended by twinning before the CO come to the stable CO. The twinning was triggered by gas ejection or particles, so suppressing of these phenomena would be the key for increasing ND{001}SD100 crystal occupations. These results have been verified for crystal growth velocity among 0.04-45 mm s(-1).

引用

页数：11

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