Fine structure of excitons in InAs/GaAs coupled quantum dots: A sensitive test of electronic coupling

被引：79

作者：

Ortner, G ^{[1
]}

Bayer, M

Larionov, A

Timofeev, VB

Forchel, A

Lyanda-Geller, YB

Reinecke, TL

Hawrylak, P

Fafard, S

Wasilewski, Z

机构：

[1] Univ Dortmund, D-44221 Dortmund, Germany

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

[3] USN, Res Lab, Washington, DC 20375 USA

[4] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.90.086404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Exciton fine structure in InAs/GaAs coupled quantum dots has been studied by photoluminescence spectroscopy in magnetic fields up to 8 T. Pronounced anticrossings and mixings of optically bright and dark states as functions of magnetic field are seen. A theoretical treatment of the mixing of the excitonic states has been developed, and it traces observed features to structural asymmetries. These results provide direct evidence for coherent coupling of excitons in quantum dot molecules.

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