Analysis and Design Considerations for Achieving the Fundamental Limits of Phase Noise in mmWave Oscillators With On-Chip MEMS Resonator

被引:6
作者
Srivastava, Abhishek [1 ]
Chatterjee, Baibhab [1 ]
Rawat, Udit [1 ]
He, Yanbo [1 ]
Weinstein, Dana [1 ]
Sen, Shreyas [1 ]
机构
[1] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47907 USA
关键词
Micromechanical devices; Phase noise; Resonant frequency; Impedance; Capacitance; System-on-chip; Oscillator; MEMS; mmwave; phase noise; RFT;
D O I
10.1109/TCSII.2020.3030074
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Very small electromechanical coupling coefficient in micro-electromechanical systems (MEMS) or acoustic resonators is quite a concern for oscillator performance, specially at mmWave frequencies. This small coefficient is the manifestation of the small ratio of motional capacitance to static capacitance in the resonators. This work provides a general solution to overcome the problem of relatively high static capacitance at mmWave frequencies and presents analysis and design techniques for achieving extremely low phase noise and a very high figure-of-merit (FoM) in an on-chip MEMS resonator based mmWave oscillator. The proposed analysis and techniques are validated with design and simulation of a 30 GHz oscillator with MEMS resonator having quality factor of 10,000 in 14 nm GF technology. Post layout simulation results show that it achieves a phase noise of -132 dBc/Hz and FoM of 217 dBc/Hz at offset of 1 MHz.
引用
收藏
页码:1108 / 1112
页数:5
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