Effect of substrate temperature on the deposited thin film CdZnTe transistor

被引：3

作者：

Zeng, Dongmei ^{[1
]}

Liao, Kangjian ^{[1
]}

Sun, Meng ^{[1
]}

Zeng, Yongyi ^{[1
]}

Chen, Fei ^{[1
]}

机构：

[1] Beijing Inst Petrochem Technol, Dept Mat Sci & Engn, Beijing 102617, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2021年 / 998卷

基金：

中国国家自然科学基金;

关键词：

Magnetron sputtering; CdZnTe film; Substrate temperature; Thin film transistor; SCHOTTKY; CRYSTAL;

D O I：

10.1016/j.nima.2021.165158

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

CdZnTe thin film transistor (TFT) detector was deposited on Si/SiO2 substrate by radio frequency (RF) magnetron sputtering technique. The influence of substrate temperature on the structure of CdZnTe film and the performance of CdZnTe TFT detector were studied. The sputtered CdZnTe films have a multiphase structure consisting of the CdZnTe phase, ZnTe phase and Te phase. (I-DS-V-DS) characteristics and photosensitivity of CdZnTe TFT detectors at different substrate temperature were reported. When the substrate temperature was 200 degrees C off-current in CdZnTe TFT detector achieved minimum value of 1.9 x 10(-11) A, as well as a higher photosensitivity of 1.9 x 10(3) (obtained at V-GS = 28.5 V). The optimal condition for preparing CdZnTe TFT detector was the substrate temperature of 200 degrees C.

引用

页数：5

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