A High PAE, Highly Integrated, Low-Cost 500W Pulsed S-Band GaN IMFET Power Amplifier

被引：0

作者：

Zhao, Bo ^{[1
]}

Henricksen, Brian ^{[1
]}

Santhakumar, Raj ^{[1
]}

机构：

[1] Qorvo Inc, 1201 E Campbell Rd, Richardson, TX 75081 USA

来源：

2018 IEEE RADAR CONFERENCE (RADARCONF18) | 2018年

关键词：

power amplifier; Gallium Nitride; S-band; HEMT; IMFET; PAE;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes a highly-integrated, high efficiency, internally matched, low-cost GaN HEMT power amplifier (IMFET PA) operating in the S-band, 2.9 - 3.3 GHz, using Qorvo's high performance 50 V, 0.25 um, GaN-on-SiC process technology. Dimensions of the complete PA module are 17.4 mm x 24 mm. Typically, this amplifier demonstrates 530 W pulsed power, 66 % Power added efficiency (PAE) and 14 dB compressed gain.

引用

页码：1416 / 1421

页数：6