Far- and near-infrared photoluminescence from n-GaAs/AlGaAs multiple quantum wells

被引：1

作者：

Vorobjev, L. E. ^{[1
]}

Firsov, D. A. ^{[1
]}

Panevin, V. Yu ^{[1
]}

Sofronov, A. N. ^{[1
]}

Balagula, R. M. ^{[1
]}

Makhov, I. S. ^{[1
]}

Vasil'ev, A. P. ^{[2
]}

机构：

[1] St Petersburg State Polytech Univ, Politech Skaya Str 29, St Petersburg 195251, Russia

[2] Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

1ST INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN 2014 ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES | 2014年 / 541卷

关键词：

TERAHERTZ EMISSION;

D O I：

10.1088/1742-6596/541/1/012082

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The results of experimental investigations of impurity-assisted photoluminescence at low temperatures from n-GaAs/AlGaAs multiple quantum wells both in near-and far-infrared (terahertz) spectral ranges are presented. The optical electron transitions from impurity ground state to heavy hole subband in near-infrared spectral range are revealed. The depopulation of the donor ground state due to these transitions allowed us to observe photoluminescence in terahertz spectral range related to electron transitions from the first electron subband to donor ground state as well as to intracenter optical transitions. Experimental results in far-and near-infrared spectral ranges are in good agreement with the results on THz photoconductivity and energy spectrum calculation.

引用

页数：5

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