Characterization of lead zirconate titanate heterolayered thin films prepared on Pt/Ti/SiO2/Si substrate by the sol-gel method

被引:27
作者
Lee, SG [1 ]
Kim, KT
Lee, YH
机构
[1] Seonam Univ, Dept Elect & Elect Engn, Namwon 590170, Chonbuk, South Korea
[2] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea
关键词
PZT; interfaces; tranmission electron microscopy; sol-gel; dielectrics; heterostructures;
D O I
10.1016/S0040-6090(00)01030-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferroelectric lead zirconate titanate (PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/SiO2/Si substrate using PZT (10/90) and PZT (90/10) metal alkoxide solutions. All PZT heterolayered films showed a uniform grain structure without the presence of rosette structures. It can be assumed that the lower PZT layers played the role of a nucleation site or a seeding layer for the formation of the upper PZT layer. Zr and Ti atoms were diffused into the adjacent PZT layers and the Pb diffusion into the Pt bottom electrode was observed. The Pb atoms that diffused into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. Below the Pt layer, a metallic Ti layer was transformed into a Ti oxide layer by the diffusion of oxygen from the atmosphere and SiO2. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The heterogeneous interfacial layer at PZT film interfaces was caused by diffusion of Zr and Ti elements during the PZT film growth. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:45 / 49
页数:5
相关论文
共 50 条
  • [21] DIELECTRIC-PROPERTIES OF (111)LEAD AND (100)LEAD ZIRCONATE-TITANATE FILMS PREPARED BY SOL-GEL TECHNIQUE
    AOKI, K
    FUKUDA, Y
    NUMATA, K
    NISHIMURA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5155 - 5158
  • [22] Preparation and characterization of lead zirconate titanate thin films derived by hybrid processing: Sol-gel method and pulsed laser deposition
    Wang, ZJ
    Yan, LJ
    Aoki, Y
    Kokawa, H
    Maeda, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9B): : 5936 - 5940
  • [23] Preparation of highly (100)-oriented PLCT thin films on Pt/Ti/SiO2/Si substrates by a simple sol-gel process
    Fu, XR
    Li, JH
    Song, ZT
    Zhu, XR
    Lin, CL
    MATERIALS LETTERS, 2000, 44 (02) : 70 - 74
  • [24] Oxygen-plasma treatment of sol-gel derived lead zirconate titanate thin films
    Lee, CE
    Jang, HK
    Park, ER
    Kang, EK
    Lee, SK
    Noh, SJ
    FERROELECTRICS, 2002, 269 : 123 - 128
  • [25] Photodecomposition of Rhodamine B on TiO2/SiO2 thin films prepared by sol-gel method
    Nocun, M.
    Kwasny, S.
    Zontek, J.
    MATERIALS SCIENCE-POLAND, 2013, 31 (01): : 88 - 94
  • [26] Synthesis and characterization of lead strontium titanate thin films by sol-gel technique
    Jain, M
    Majumder, SB
    Guo, R
    Bhalla, AS
    Katiyar, RS
    MATERIALS LETTERS, 2002, 56 (05) : 692 - 697
  • [27] Characterization of mesoporous ZnO:SiO2 films obtained by the sol-gel method
    Martins, R. M. S.
    Musat, V.
    Muecklich, A.
    Franco, N.
    Fortunato, E.
    THIN SOLID FILMS, 2010, 518 (23) : 7002 - 7006
  • [28] Preparation and properties of piezoelectric lead zirconate titanate thin films for microsensors and microactuators by sol-gel processing
    Tuchiya, T
    Itoh, T
    Sasaki, G
    Suga, T
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1996, 104 (03) : 159 - 163
  • [29] Improvement in mechanical property of SiO2 films prepared by sol-gel
    Guo Peitao
    ADVANCES IN MATERIAL SCIENCE, MECHANICAL ENGINEERING AND MANUFACTURING, 2013, 744 : 269 - 272
  • [30] Optical and structural properties of low thickness lead zirconate titanate films on sapphire substrates prepared via sol-gel method
    Garoli, Denis
    Natali, Marco
    Rigato, Valentino
    Romanato, Filippo
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (05):