Characterization of lead zirconate titanate heterolayered thin films prepared on Pt/Ti/SiO2/Si substrate by the sol-gel method

被引:27
|
作者
Lee, SG [1 ]
Kim, KT
Lee, YH
机构
[1] Seonam Univ, Dept Elect & Elect Engn, Namwon 590170, Chonbuk, South Korea
[2] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea
关键词
PZT; interfaces; tranmission electron microscopy; sol-gel; dielectrics; heterostructures;
D O I
10.1016/S0040-6090(00)01030-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferroelectric lead zirconate titanate (PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/SiO2/Si substrate using PZT (10/90) and PZT (90/10) metal alkoxide solutions. All PZT heterolayered films showed a uniform grain structure without the presence of rosette structures. It can be assumed that the lower PZT layers played the role of a nucleation site or a seeding layer for the formation of the upper PZT layer. Zr and Ti atoms were diffused into the adjacent PZT layers and the Pb diffusion into the Pt bottom electrode was observed. The Pb atoms that diffused into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. Below the Pt layer, a metallic Ti layer was transformed into a Ti oxide layer by the diffusion of oxygen from the atmosphere and SiO2. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The heterogeneous interfacial layer at PZT film interfaces was caused by diffusion of Zr and Ti elements during the PZT film growth. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:45 / 49
页数:5
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