A CMOS smart temperature sensor with a 3σ inaccuracy of ±0.5 °C from -50 °C to 120 °C

被引:88
作者
Pertijs, MAP [1 ]
Niederkorn, A
Ma, X
McKillop, B
Bakker, A
Huijsing, JH
机构
[1] Delft Univ Technol, Elect Instrumentat Lab, NL-2628 CD Delft, Netherlands
[2] Zoran Corp, Mesa, AZ 85210 USA
[3] Microchip Technol, Chandler, AZ 85224 USA
[4] On Semicond, Phoenix, AZ 85082 USA
[5] Analog Devices Inc, San Jose, CA 95134 USA
关键词
calibration; curvature correction; dynamic offset cancellation; smart sensors; temperature sensors;
D O I
10.1109/JSSC.2004.841013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-cost temperature sensor with on-chip sigma-delta ADC and digital bus interface was realized in a 0.5 mum CMOS process. Substrate pup transistors are used for temperature sensing and for generating the ADC's reference voltage. To obtain a high initial accuracy in the readout circuitry, chopper amplifiers and dynamic element matching are used. High linearity is obtained by using second-order curvature correction. With these measures, the sensor's temperature error is dominated by spread on the base-emitter voltage of the imp transistors. This is trimmed after packaging by comparing the sensor's output with the die temperature measured using an extra on-chip, calibration transistor. Compared to traditional calibration techniques, this procedure is much faster and therefore reduces production costs. The sensor is accurate to within, +/-0.5degreesC (3sigma) from -50degreesC to 120degreesC.
引用
收藏
页码:454 / 461
页数:8
相关论文
共 22 条
[1]  
*AN DEV INC, 2003, ADT7301 DAT SHEET
[2]   Micropower CMOS temperature sensor with digital output [J].
Bakker, A ;
Huijsing, JH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (07) :933-937
[3]   A CMOS nested-chopper instrumentation amplifier with 100-nV offset [J].
Bakker, A ;
Thiele, K ;
Huijsing, JH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (12) :1877-1883
[4]  
BAKKER A, 2000, INT SERIES ENG COMPU, V595
[5]   Minimization of the mechanical-stress-induced inaccuracy in bandgap voltage references [J].
Fruett, F ;
Meijer, GCM ;
Bakker, A .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (07) :1288-1291
[6]   The piezojunction effect in NPN and PNP vertical transistors and its influence on silicon temperature sensors [J].
Fruett, F ;
Wang, GJ ;
Meijer, GCM .
SENSORS AND ACTUATORS A-PHYSICAL, 2000, 85 (1-3) :70-74
[7]  
Gilbert B., 1993, U.S. Patent, Patent No. [5,195,827, 5195827]
[8]  
Marsh D, 2003, EDN, V48, P43
[9]  
*MAX INT PROD, 2003, DS1626
[10]   THERMAL SENSORS BASED ON TRANSISTORS [J].
MEIJER, GCM .
SENSORS AND ACTUATORS, 1986, 10 (1-2) :103-125