Simple and Accurate Circuit Simulation Model for SiC Power MOSFETs

被引：60

作者：

Arribas, Alejandro Pozo ^{[1
]}

Shang, Fei ^{[1
]}

Krishnamurthy, Mahesh ^{[1
]}

Shenai, Krishna ^{[2
]}

机构：

[1] IIT, Dept Elect & Comp Engn, Chicago, IL 60616 USA

[2] Argonne Natl Lab, Argonne, IL 60439 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 02期

关键词：

Circuit model; dc-dc converter; efficiency; power MOSFET; Schottky diode; silicon carbide (SiC); synchronous operation;

D O I：

10.1109/TED.2014.2384277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Simple and accurate circuit simulation models for high-voltage silicon carbide power MOSFETs and Schottky barrier diodes are presented and validated. The models are physics-based and consist of minimal number of model parameters that can be easily extracted from simple static I-V and C-V measurements. The models are used in a buck-boost bidirectional dc-dc converter, with and without an antiparallel Schottky diode. The efficiency of the converter was analyzed for synchronous and nonsynchronous operation of the switches. An optimal selection of the antiparallel Schottky diode is proposed to minimize the cost of the converter without compromising its efficiency.

引用

页码：449 / 457

页数：9

共 16 条

[1]

Angelov G, 2004, 27TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY, BOOKS 1-3, CONFERENCE PROCEEDINGS, P257

[2]

[Anonymous], 1998, LTSPICE 4 M MOSFET H

[3] A Simple and Accurate Circuit Simulation Model for High-Voltage SiC Power MOSFETs [J].

Arribas, A. Pozo ;

Krishnamurthy, M. ;

Shenai, K. .

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07) :99-110

[4]

Burress T. A, 2011, EVALUATION 2010 TOYO

[5]

Callahan B., 2011, CPWRAN09 CREE INC

[6]

Lades M., 2000, Ph.D. Thesis

[7]

McNutt T, 2003, IEEE POWER ELECTRON, P217

[8] Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes [J].

Polenov, D. ;

Lutz, J. ;

Proebstle, H. ;

Broesse, A. .

IET CIRCUITS DEVICES & SYSTEMS, 2007, 1 (05) :387-394

[9] Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures [J].

Rumyantsev, S. L. ;

Shur, M. S. ;

Levinshtein, M. E. ;

Ivanov, P. A. ;

Palmour, J. W. ;

Agarwal, A. K. ;

Hull, B. A. ;

Ryu, Sei-Hyung .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (07)

[10]

Russell Jr H. T., 1991, SPIECE DIODE MODEL

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