Effect of Thermal Oxidation Process on Emitter Profiling and Solar Cell Performance

被引：0
作者：
Habib, A. [1 ,2 ]
Fano, V. [1 ]
Rasool, M. A. [1 ]
Otaegi, A. [1 ]
Gutierrez, J. R. [1 ]
Jimeno, J. C. [1 ]
Ahmed, M. T. [2 ]
机构：
[1] Univ Basque Country, Technol Inst Microelect TiM, Zamudio, Spain
[2] Mansoura Univ, Dept Phys, Fac Sci, Mansoura, Egypt
来源：
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年
关键词：
Thermal oxidation; Phosphorus profiles; sheet resistance; TSUPREM4; PC1D; SILICON; PHOSPHORUS; DIFFUSION;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The control of phosphorus surface concentration is a very important due to that have a strongly effect on solar cell efficiency. Two kinds of phosphorus profiles were simulated Using TSUPREM-4 simulating program, the first emitter profile is obtained with the only pre-deposition process for various diffusion temperature and the second emitter profile by adding a drive-in after introducing thermal dry oxidation step after diffusion process for various diffusion temperature. The first emitters show maximum efficiencies using PC1D simulation program about (eta approximate to 16-19 with emitter surface concentration Ns = (0.8-3) x10(20)cm(-3) and junction depth (0.35-0.6)mu m. For second emitters the surface concentration is reduced with the same diffusion parameters and show improvement of the maximum efficiencies (eta approximate to 2021 with surface doping concentration Ns = (0.6-2) x10(19) (cm(-3)) and junction depth (1.3-2.3)mu m. The silicon oxide layer thicknesses become thicker for highly surface doped emitters. Silicon solar cell performance and parameters are improved after the thermal dry oxidation process and become more efficient.
引用
收藏
页码：639 / 642
页数：4
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