Semiconductor technology trends for phased array antenna power amplifiers

被引:11
作者
Edwards, Terry [1 ]
机构
[1] Engalco, Bridlington YO15 3TG, Yorks, England
来源
2006 EUROPEAN RADAR CONFERENCE | 2006年
关键词
power amplifiers; semiconductors; GaAs; GaN; SiC; MMICs; phased-arrays;
D O I
10.1109/EURAD.2006.280326
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Phased array antennas, in both communications and radar systems, are increasingly being favoured over conventional mechanically-scanned systems. In their active form, particularly in military scenarios, the acronym AESA (active electronically-scanned arrays) is frequently encountered. By definition these types of antennas specifically demand a source (or sources) of microwave power. Today and forseeably into the future RF semiconductor power amplifiers (mainly MMICs) are implemented to supply the required power to each individual element in the active array. In this paper some examples of active phased arrays are reviewed-both existing and those under development. The paper presents and critiques the current state-of-the-art with suitable GaAs MMIC power amplifiers (power versus frequency, efficiency, suppliers, etc.). GaN and SiC MESFET devices and MMICs are also considered-again with references to power versus frequency, efficiency, suppliers, etc.
引用
收藏
页码:269 / 272
页数:4
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