A 1.0 V, 1022 GHz, 4 mW LNA Utilizing Weakly Saturated SiGe HBTs for Single-Chip, Low-Power, Remote Sensing Applications

被引：19

作者：

Inanlou, Farzad ^{[1
]}

Coen, Christopher T. ^{[1
]}

Cressler, John D. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2014年 / 24卷 / 12期

关键词：

K-band; Ku-band; low noise amplifier; low power; low voltage; SiGe BiCMOS; weak saturation; wideband;

D O I：

10.1109/LMWC.2014.2361662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1 V supply voltage, 10-22 GHz wideband low-power low noise amplifier (LNA) is implemented in a 0.13 mu m SiGe BiCMOS technology, targeting portable single-chip remote sensing radar application. This LNA exhibits a measured gain of 15.5 dB at 16 GHz and a 3 dB bandwidth of 12 GHz, while dissipating only 4 mA from a 1 V supply, with intentionally biasing the HBTs in weak saturation. The LNA has a measured noise figure (NF) of 3.4 dB at 16 GHz and less than 4.4 dB across the operating bandwidth of 10 to 22 GHz. In addition, the LNA design offers a reduced bandwidth operational mode of 10-16 GHz for interference reduction, bringing the power consumption further down to only 3 mW.

引用

页码：890 / 892

页数：3

共 9 条

[1] Andrei C., 2012, 2012 INT S SIGN SYST
[2] [Anonymous], 2003, SILICON GERMANIUM HE
[3] Analysis and Design of a 1.6-28-GHz Compact Wideband LNA in 90-nm CMOS Using a π-Match Input Network
Chen, Hsien-Ku
Lin, Yo-Sheng
Lu, Shey-Shi
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (08) : 2092 - 2104
[4] A 0.1-20 GHz Low-Power Self-Biased Resistive-Feedback LNA in 90 nm Digital CMOS
Chen, Mingqi
Lin, Jenshan
[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (05) : 323 - 325
[5] Doviak R.J., 2006, Doppler radar and weather observations, V2nd ed.
[6] InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption
Liu, Liang
Alt, Andreas R.
Benedickter, Hansruedi
Bolognesi, C. R.
[J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (02) : 209 - 211
[7] Ma D., 2009, IEEE MTT S INT, P673
[8] Okushima M, 2009, IEEE RAD FREQ INTEGR, P263
[9] SETH S, 2011, IEEE POTENTIALS, V30, P3

← 1 →