Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device

被引：26

作者：

Chen, Xinman ^{[1
]}

Hu, Wei ^{[2
]}

Li, Yan ^{[1
]}

Wu, Shuxiang ^{[2
]}

Bao, Dinghua ^{[2
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Guangdong Engn Res Ctr Optoelect Funct Mat & Devi, Guangdong Prov Key Lab Nanophoton Funct Mat & Dev, Guangzhou 510631, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 05期

基金：

高等学校博士学科点专项科研基金;

关键词：

TRANSITION; EVOLUTION;

D O I：

10.1063/1.4941287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the dynamic evolution of TiN/HfO2/Pt device from bipolar resistive switching (BRS) to complementary resistive switching (CRS) was reported. The device exhibits the uniform BRS with long retention, good endurance, and self-compliance characteristics after the asymmetric two-step electroforming. However, BRS of the device eventually transforms to CRS after the transitional processes through controlling the compliance current. Meanwhile, the effective barrier height rises up accordingly as the device evolves from BRS to CRS. These superior resistive switching performances of TiN/HfO2/Pt device here can be elucidated in views of evolution of asymmetric filament. This work confirms the intimate correlation and discrepancy between BRS and CRS, and also indicates the potential application of TiN/HfO2/Pt device for future ultra-dense resistive random access memory. (C) 2016 AIP Publishing LLC.

引用

页数：4

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