Epitaxial growth of laminar crystalline silicon on CaF2

被引：14

作者：

Schroeder, BR

Meng, S

Bostwick, A

Olmstead, MA

Rotenberg, E

机构：

[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.1290158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si heteroepitaxy on CaF2 was studied with x-ray photoelectron spectroscopy and diffraction and low-energy electron diffraction to determine the interface bonding and silicon overlayer growth mode. The CaF2 surface was prepared by irradiation with low-energy electrons and exposure to arsenic, which replaced surface fluorine atoms with arsenic. Thin Si films (1.3 nm) were subsequently deposited at 550 degrees C. The Si films completely cover the CaF2 substrate and have a type-B orientation. The resultant interface has Si-Ca bonds, with the As surfactant layer terminating the Si surface in a 1x1 structure. (C) 2000 American Institute of Physics. [S0003-6951(00)02935-1].

引用

页码：1289 / 1291

页数：3

共 23 条

[1] Morphology and optical properties of silicon nanostructures grown on CaF2 [J].

Andersson, M ;

Iline, A ;

Trager, F .

THIN SOLID FILMS, 1998, 318 (1-2) :103-107

[2] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE [J].

ASANO, T ;

ISHIWARA, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3566-3570

[3] INTERFACE FORMATION OF GAAS WITH SI(100), SI(111), AND GE(111) - CORE-LEVEL SPECTROSCOPY FOR MONOLAYER COVERAGES OF GAAS, GA, AND AS [J].

BRINGANS, RD ;

OLMSTEAD, MA ;

UHRBERG, RIG ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1987, 36 (18) :9569-9580

[4] GROWTH-KINETICS OF CAF2/SI(111) HETEROEPITAXY - AN X-RAY PHOTOELECTRON DIFFRACTION STUDY [J].

DENLINGER, JD ;

ROTENBERG, E ;

HESSINGER, U ;

LESKOVAR, M ;

OLMSTEAD, MA .

PHYSICAL REVIEW B, 1995, 51 (08) :5352-5365

[5] A PROPOSED ELECTROABSORPTION MODULATOR AT 1.55 MU-M IN SILICON SILICON-GERMANIUM ASYMMETRIC QUANTUM-WELL STRUCTURES [J].

FRIEDMAN, L ;

SOREF, RA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (10) :1200-1202

[6] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS [J].

GILMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2208-2218

[7] ROLE OF STEP AND TERRACE NUCLEATION IN HETEROEPITAXIAL GROWTH-MORPHOLOGY - GROWTH-KINETICS OF CAF2/SI(111) [J].

HESSINGER, U ;

LESKOVAR, M ;

OLMSTEAD, MA .

PHYSICAL REVIEW LETTERS, 1995, 75 (12) :2380-2383

[8] Effects of electron beam exposure conditions on the surface modification of CaF2 (111) for heteroepitaxy of GaAs/CaF2 structure [J].

Hwang, SM ;

Miyasato, K ;

Kawasaki, K ;

Tsutsui, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (03) :1701-1705

[9] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

ISHIWARA, H ;

ASANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :66-68

[10] A NOVEL ELECTRON-BEAM EXPOSURE EPITAXY FOR GROWING GAAS FILMS ON FLUORIDE SI STRUCTURES [J].

LEE, HC ;

ISHIWARA, H ;

KANEMARU, S ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11) :L1834-L1836

← 1 2 3 →